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PAM2304 Datasheet(PDF) 3 Page - Diodes Incorporated |
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PAM2304 Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 12 page ![]() PAM2304 Document number: DS36386 Rev. 2 - 2 3 of 12 www.diodes.com June 2014 © Diodes Incorporated PAM2304 A Product Line of Diodes Incorporated Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Parameter Rating Unit Supply Voltage 2.7 to 5.5 V Operation Temperature Range -40 to +85 °C Junction Temperature Range -40 to +125 Thermal Information Parameter Symbol Package Max Unit Thermal Resistance (Junction to Case) θJC TSOT25 (Note 4) 130 °C/W U-DFN2020-6 25 Thermal Resistance (Junction to Ambient) θJA TSOT25 250 U-DFN2020-6 68 Internal Power Dissipation (TA = +25°C) PD TSOT25 400 mW U-DFN2020-6 980 Note: 4. The maximun output current for TSOT25 package is limited by internal power dissipation capacity as described in Application Information hereinafter. Electrical Characteristics (@TA = +25°C, VIN = 3.6V, VO = 1.8V, CIN = 10µF, COUT = 10µF, L = 1µH, unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Units Input Voltage Range VIN 2.5 5.5 V Regulated Feedback Voltage VFB 0.588 0.6 0.612 V Reference Voltage Line Regulation ∆VFB 0.3 %/V Regulated Output Voltage Accuracy VO IO = 100mA -3 +3 % Peak Inductor Current IPK VIN = 3V, VFB = 0.5V or VO = 90% 1.5 A Output Voltage Line Regulation LNR VIN = 2.5V to 5V, IO = 10mA 0.2 0.5 %/V Output Voltage Load Regulation LDR IO = 1mA to 800mA 0.5 1.5 % Quiescent Current IQ No load 40 70 µA Shutdown Current ISD VEN = 0V 1 µA Oscillator Frequency fOSC VO = 100% 3 MHz VFB = 0V or VO = 0V 1 MHz Drain-Source On-State Resistance RDS(ON) IDS = 100mA P MOSFET 0.30 0.45 Ω N MOSFET 0.35 0.50 Ω SW Leakage Current ILSW ±0.01 1 µA High Efficiency η 95 % EN Threshold High VEH 1.5 V EN Threshold Low VEL 0.3 V EN Leakage Current IEN ±0.01 µA Over Temperature Protection OTP 150 °C OTP Hysteresis OTH 30 °C |
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