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C0810 Datasheet(PDF) 2 Page - IMP, Inc

Part # C0810
Description  CMOS 0.8mm High-Resistance Poly for Analog
PDF  2 Pages
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Manufacturer  IMP [IMP, Inc]
Direct Link  http://www.ds-imp.com.cn/index.asp
Logo IMP - IMP, Inc

C0810 Datasheet(HTML) 2 Page - IMP, Inc

  C0810 Datasheet HTML 1Page - IMP, Inc C0810 Datasheet HTML 2Page - IMP, Inc  
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16
C0810-4-98
Process C0810
Physical Characteristics
Starting Material
P <100>
N+/P+ Width/Space
1.4 / 1.6
µm
Starting Mat. Resistivity
25 - 50
Ω-cm
N+ To P+ Space
5.9
µm
Typ. Operating Voltage
5V
Contact To Poly Space
0.8
µm
Well Type
N-well
Contact Overlap Of Diffusion
0.7
µm
Metal Layers
2
Contact Overlap Of Poly
0.7
µm
Poly Layers
2
Metal-1 Overlap Of Contact
0.7
µm
Contact Size
0.8x0.8
µm
Metal-1 Overlap Of Via
0.7
µm
Via Size
0.8x0.8
µm
Metal-2 Overlap Of Via
0.7
µm
Metal-1 Width/Space
1.4 / 1.0
µm
Minimum Pad Opening
65x65
µm
Metal-2 Width/Space
1.4 / 1.1
µm
Minimum Pad-to-Pad Spacing
5.0
µm
Gate Poly Width/Space
0.8 / 1.0
µm
Minimum Pad Pitch
80.0
µm
Collector Voltage, VCE, Volt.
C0810 Vertical pnp Transistor Characteristics
IC V/S VC, 60 x 7.2
µm
0
-400.0
0
-1-2-3-4-5
IB = -12.5 µA
IB = -10.0 µA
IB = -7.5 µA
IB = -5.0 µA
IB = -2.5 µA
Base Voltage, VBE, Millivolts.
C0810 Vertical pnp Transistor Characteristics
IC/IB, pnp 60 x 7.2 µm
-10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
-400
-500
-600
-700
-800
IC
IB
-900
40.00
20
Drain Voltage, VDS, Volts.
C0810 - n - Channel Transistor Characteristics
ID V/S VD, W/L = 100 x 0.8
µm
0
01
2
3
45
VGS=5V
VGS=4V
VGS=3V
VGS=2V
VGS=1V
-20.0
-10.0
Drain Voltage, VDS, Volts.
C0810 - P - Channel Transistor Characteristics
ID V/S VD, W/L = 100 x 0.8
µm
0
0
-1-2
-3-4
-5
VGS = -5V
VGS = -4V
VGS = -3V
VGS = -2V
VGS = -1V



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