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C0810 Datasheet(PDF) 1 Page - IMP, Inc |
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C0810 Datasheet(HTML) 1 Page - IMP, Inc |
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1 / 2 page ![]() 15 © IMP, Inc. ISO 9001 Registered ® Process C0810 CMOS 0.8 µm High-Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTN 0.6 0.8 1.0 V 100x0.8 µm Body Factor γ N 0.74 V1/2 100x0.8 µm Conduction Factor βN 75 94 115 µA/V2 100x100 µm Effective Channel Length LeffN 0.8 µm 100x0.8 µm Width Encroachment ∆WN 0.3 µm Per side Punch Through Voltage BVDSSN 713 V Poly Field Threshold VTFP(N) 10 17 V P-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTP – 0.7 – 0.9 –1.1 V 100x0.8 µm Body Factor γ P 0.57 V1/2 100x0.8 µm Conduction Factor βP 25 31 37 µA/V2 100x100 µm Effective Channel Length LeffP 0.85 µm 100x0.8 µm Width Encroachment ∆WP 0.4 µm Per side Punch Through Voltage BVDSSP –7 –12 V Poly Field Threshold Voltage VTFP(P) –10 –17 V Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Well (field) Sheet Resistance ρ N-well(f) 0.50 0.65 0.80 K Ω/ n-well N+ Sheet Resistance ρ N+ 45 60 75 Ω/ N+ Junction Depth xjN+ 0.25 µm P+ Sheet Resistance ρ P+ 68 90 112 Ω/ P+ Junction Depth xjP+ 0.4 µm Gate Oxide Thickness TGOX 17.5 nm Field Oxide Thickness TFIELD 700 nm Bottom Poly Sheet Res. ρ POLY1 15 23 32 Ω/ Gate Poly Sheet Resistance ρ POLY2 15 23 32 Ω/ Metal-1 Sheet Resistance ρ M1 40 60 80 m Ω/ Metal-2 Sheet Resistance ρ M2 20 30 40 m Ω/ Passivation Thickness TPASS 200+900 nm oxide+nit. High Resistance Poly ρ HI-POLY 1.5 2.0 2.5 K Ω/ Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide COX 1.97 fF/ µm2 Metal-1 to Poly1 CM1P 0.046 fF/ µm2 Metal-1 to Silicon CM1S 0.028 fF/ µm2 Metal-2 to Metal-1 CMM 0.038 fF/ µm2 Poly-1 to Poly-2 CPP 0.69 0.822 1.015 fF/ µm2 |
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