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EC5116 Datasheet(PDF) 3 Page - E-CMOS Corporation

Part # EC5116
Description  3A, 40V Asynchronous Step-Down Converter
PDF  12 Pages
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC5116 Datasheet(HTML) 3 Page - E-CMOS Corporation

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EC5116
E-CMOS Corp. (www.ecmos.com.tw)
7I26N-Rev. F001
3A, 40V Asynchronous Step-Down Converter
3/12
Note
1) Exceeding these ratings may damage the device.
2) The EC5116 guarantees robust performance from -40°C to 150°C junction temperature. The junction
temperature range specification is assured by design, characterization and correlation with statistical process
controls.
3) The EC5116 includes thermal protection that is intended to protect the device in overload conditions.
Thermal protection is active when junction temperature exceeds the maximum operating junction
temperature. Continuous operation over the specified absolute maximum operating junction temperature may
damage the device.
4) Measured on JESD51-7, 4-layer PCB.
Electrical Characteristics
VIN = 12V, TA = 25ºC, unless otherwise stated.
Item
Symbol
Condition
Min.
Typ.
Max.
Units
VIN Under-voltage Lockout
Threshold
VIN_MIN
VIN falling
3.6
3.8
4
V
VIN Under-voltage Lockout
Hysteresis
VIN_MIN_HYST
VIN rising
200
400
600
mV
Shutdown Supply Current
ISD
VEN=0V
1.6
3
µA
Supply Current
IQ
VEN=5V, VFB=1V
30
65
90
µA
Feedback Voltage
VFB
3.6V<VVIN<40V
0.784
0.8
0.816
V
Top Switch Resistance5)
RDS(ON)T
63
78
m
Top Switch Leakage Current
ILEAK_TOP
VIN=40V, VEN=0V, VSW=0V
0.1
uA
Top Switch Current Limit5)
ILIM_TOP
Minimum Duty Cycle
3.6
4.5
A
Switch Frequency
FSW
RRT = 330k
100
160
220
kHz
Minimum On Time5)
TON_MIN
117
ns
Minimum Off Time
TOFF_MIN
VFB=0V
100
150
200
ns
EN Shutdown Threshold
VEN_TH
VEN falling, FB=1V
1
1.2
1.4
V
EN shut down hysteresis
VEN_HYST
VEN rising, FB=1V
50
100
150
mV
Thermal Shutdown5)
TTSD
137
°C
Thermal Shutdown Recovery
Hysteresis5)
TTSDR
13
°C
Note：
5) Guaranteed by design.



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