Ultra Low Noise, Medium Current

D-PHEMT Transistor

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

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The Big Deal

• Low noise figure, 0.5 dB

• High gain, 24.1 dB

• High IP3, +32.3 dBm

• High P1dB, 19.6 dBm

Product Overview

Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000

MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system

noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications

systems. Manufactured using highly repeatable D-PHEMT* technology, the unit comes housed in a tiny

4-lead SOT-343 package. This model requires external biasing and matching.

Key Features

Feature

Advantages

Wideband, 10 to 4000 MHz

A single device covers many wireless communications bands including cellular, ISM,

GSM, WCDMA, WiMax, WLAN, and more.

High IP3 vs. DC power consumption

• +32.3 dBm at 300 MHz

• +38.7 dBm at 4000 MHz

The SAV-331+ matches industry leading IP3 performance relative to device size and

power consumption. Enhanced linearity over a broad frequency range makes the

device ideal for use in:

• Driver amplifiers for complex waveform upconverter paths

• Drivers in linearized transmit systems

Combines high gain (24.1 dB) with very

low noise Figure (0.5 dB)

The unique combination of high gain and low noise Figure results in lower overall

system noise.

50Ω

10 to 4000 MHz

* Depletion mode Pseudomorphic High Electron Mobility Transistor.

CASE STYLE: MMM1362

SAV-331+