©

1987

SILICON SWITCHING DIODE

1SS304

HIGH SPEED SWITCHING

SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE

DATA SHEET

Document No. D16309EJ2V0DS00 (2nd edition)

(Previous No. DC-2101)

Date Published July 2002 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

• Wide applications including switching, limitter, clipper.

• Double diode configuration assures economical use.

ABSOLUTE MAXIMUM RATINGS

Peak Reverse Voltage

75

V

DC Reverse Voltage

50

V

Surge Current (1

µs)

Note

6.0

A

Surge Current (1

µs)

4.0

A

Peak Forward Current

Note

450

mA

Peak Forward Current

300

mA

Average Rectified Current

Note

150

mA

Average Rectified Current

100

mA

Maximum Temperatures

Junction Temperature

150

°C

Storage Temperature Range

–55 to + 150

°C

Thermal Resistance

Junction to Ambient

Note

1.0

°C/mW

Junction to Ambient

0.85

°C/mW

Note Both diodes loaded simultaneously.

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

0.67

1.0

V

0.75

1.1

V

Forward Voltage

0.85

1.2

V

Reverse Current

0.1

µA

Capacitance

1.1

4.0

pF

Reverse Recovery Time

See Test Circuit.

3.0

ns

PACKAGE DIMENSIONS (Unit: mm)

2.1

±0.1

1.25

±0.1

3

Marking

2

1

CONNECTION DIAGRAM (Top View)

2

1

3

1. Anode

2. Anode

3. Cathode

Marking : A6