12T06AFSW datasheet(5/7 Pages) NELLSEMI

5 / 7 page

100

(A)

Fig.5 On-state characteristics (maximum values).

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

T max.

= 0.85 V

R = 35 mΩ

T =T max

T =25°C

(V)

(A)

TSM

Fig.6 Surge peak on-state current versus number

of cycles.

100

1000

t=20ms

One cycle

Non repetitive

T initial=25°C

Repetitive

T =90°C

Number of cycles

100

110

120

130

100

1000

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT

I & I

T (°C)

Fig.9 Relative variation of critical rate of decrease

of main current versus (dV/dt)c (typical values).

Fig.10 Relative variation of critical rate of

decrease of main current versus (dV/dt)c

(typical values).

Fig.7 Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp < 10ms.

and corresponding value of l t.

Fig.8 Relative variation of gate trigger current,holding

current and latching current versus junction

temperature (typical values).

(A), l t(A s)

TSM

l ,l [T ] / l

,l ,l [T =25°C]

GT H L

0.0

0.4

0.8

1.2

1.6

2.4

2.0

2.8

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0.1

1.0

10.0

100.0

0.1

1.0

10.0

100.0

dI/dt limitation:

50A/µs

T initial=25°C

I t

ITSM

t (ms)

0.01

0.10

1.00

10.00

CW/BW

(dV/dt)c (V/µs)

4.5

5.0

(dV/dt)c (V/µs)

www.nellsemi.com

Page 5 of 7

12T Series RoHS

RoHS

12T06AFSW Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd

12T06AFSW Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL