K3639 datasheet(5/7 Pages) NEC

5 / 7 page

Data Sheet D15967EJ3V0DS

2SK3639

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

2.5

7.5

12.5

- 50 - 25

100 125 150

ID = 32 A

Pulsed

10 V

VGS = 4.5 V

Tch - Channel Temperature - °C

100

1000

10000

0.01

0.1

100

V GS = 0 V

f = 1 M H z

C iss

C oss

C rss

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100

1000

0.1

100

td(off)

td(on)

VDD = 10 V

VGS = 10 V

R G = 10

Ω

ID - Drain Current - A

1020

3040

VDS

VDD = 16 V

10 V

ID = 64 A

VGS

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

0.01

0.1

100

1000

0.5

1.5

VGS = 10 V

0 V

Pulsed

VF(S-D) - Source to Drain Voltage - V

100

1000

0.1

100

di/dt = 100 A/

µs

VGS = 0 V

IF - Diode Forward Current - A

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