K3639 datasheet(1/7 Pages) NEC

Part #	K3639

Description	SWITCHING N-CHANNEL POWER MOSFET

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MOS FIELD EFFECT TRANSISTOR

2SK3639

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D15967EJ3V0DS00 (3rd edition)

Date Published January 2005 NS CP(K)

Printed in Japan

2002

The mark

shows major revised points.

DESCRIPTION

The 2SK3639 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, and designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

FEATURES

• Low on-state resistance

RDS(on)1 = 5.5 m

Ω MAX. (VGS = 10 V, ID = 32 A)

RDS(on)2 = 8.5 m

Ω MAX. (VGS = 4.5 V, ID = 32 A)

• Low Ciss: Ciss = 2400 pF TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

±64

A

Drain Current (pulse)

Note

ID(pulse)

±256

A

Total Power Dissipation (TC = 25°C)

PT1

40

W

Total Power Dissipation

PT2

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note PW

≤ 10

µs, Duty Cycle ≤ 1%

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3639-ZK

TO-252 (MP-3ZK)

(TO-252)

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