P1010AT datasheet(1/4 Pages) NIKOSEM

Part #	P1010AT

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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REV 1.1

1

G-32-3

N-Channel Enhancement Mode

Field Effect Transistor

P1010AT

TO-220

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±25

V

Continuous Drain Current

TC = 25 ° C

ID

69

A

TC = 100 ° C

49

Pulsed Drain Current

1

IDM

200

Avalanche Current

IAS

23

Avalanche Energy

L = 1mH

EAS

264

mJ

Power Dissipation

TC = 25 ° C

PD

115

W

TC = 100 ° C

58

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 175

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

1.3

° C / W

Junction-to-Ambient

RJA

50

1Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

100

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2.5

3.5

4.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 80V, VGS = 0V

1

A

VDS = 80V, VGS = 0V, TJ = 125 ° C

10

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

100V

10.5mΩ

69A

G

D

S

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P1010AT Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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