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P1010AT Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # P1010AT
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P1010AT Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV 1.1
2
G-32-3
N-Channel Enhancement Mode
Field Effect Transistor
P1010AT
TO-220
Halogen-Free & Lead-Free
NIKO-SEM
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 20A
8.2
10.5
mΩ
VGS = 7V, ID = 20A
9.9
13.5
Forward Transconductance
1
gfs
VDS = 5V, ID = 20A
57
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
4863
pF
Output Capacitance
Coss
375
Reverse Transfer Capacitance
Crss
297
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
0.8
Ω
Total Gate Charge
2
Qg
VGS = 10V
VDS =50V,ID = 20A
101
nC
VGS = 7V
76
Gate-Source Charge
2
Qgs
28
Gate-Drain Charge
2
Qgd
39
Turn-On Delay Time
2
td(on)
VDD = 50V,
ID  20A, VGS = 10V, RGEN =6Ω
41
nS
Rise Time
2
tr
99
Turn-Off Delay Time
2
td(off)
93
Fall Time
2
tf
64
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
63
A
Forward Voltage
1
VSD
IF = 20A , VGS = 0V
1.2
V
Reverse Recovery Time
trr
IF = 20A , dIF/dt= 100A/μs
46
nS
Reverse Recovery Charge
Qrr
69
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.



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