P1610AD datasheet(1/4 Pages) NIKOSEM

Part #	P1610AD

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

Logo

1 / 4 page

REV 1.0

1

E-28-1

N-Channel Enhancement Mode

Field Effect Transistor

P1610AD

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

110

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

45

A

TC = 100 °C

28

Pulsed Drain Current

1

IDM

80

Avalanche Current

IAS

13.7

Avalanche Energy

2

EAS

93

mJ

Power Dissipation

TC = 25 °C

PD

83

W

TC = 100 °C

33

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

1.5

°C / W

1Pulse width limited by maximum junction temperature.

2Starting T

j =25 °C,L=1mH,VDD=50V

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

110

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2

3.5

4

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 80V, VGS = 0V

1

A

VDS=80V, VGS=0V, TJ=125 °C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 7V, ID = 15A

14

21

mΩ

VGS = 10V, ID = 20A

13

16

Forward Transconductance

1

gfs

VDS = 10V, ID = 20A

63

S

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

110V

16mΩ

45A

G

D

S

Similar Part No. - P1610AD

Manufacturer	Part #	Datasheet	Description
Wuxi U-NIKC Semiconduct...	P1610AD	513Kb / 5P	N-Channel Enhancement Mode MOSFET

More results

Similar Description - P1610AD

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

P1610AD Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

P1610AD Datasheet(HTML) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

Similar Part No. - P1610AD

Similar Description - P1610AD

Html Pages

1 2 3 4

Datasheet Download

Link URL