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P1610AD Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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P1610AD Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() REV 1.0 2 E-28-1 N-Channel Enhancement Mode Field Effect Transistor P1610AD TO-252 Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 3017 pF Output Capacitance Coss 255 Reverse Transfer Capacitance Crss 152 Total Gate Charge 2 Qg VDS = 55V, ID = 20A VGS = 10V 58 nC Gate-Source Charge 2 Qgs 16.5 Gate-Drain Charge 2 Qgd 21.5 Turn-On Delay Time 2 td(on) VDD = 55V, ID 20A, VGS = 10V, RGS = 6Ω 33 nS Rise Time 2 tr 90 Turn-Off Delay Time 2 td(off) 77 Fall Time 2 tf 55 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 45 A Forward Voltage 1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 37 nS Reverse Recovery Charge Qrr 48 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
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