PB555BA datasheet(1/4 Pages) NIKOSEM

Part #	PB555BA

Description	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV1.0

1

F-24-1

P-Channel Enhancement Mode

Field Effect Transistor

PB555BA

PDFN 2x2S

Halogen-Free & Lead-Free

NIKO-SEM

G

S

D

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low RDS(on) to Minimize Conduction Losses.

• Ohmic Region Good RDS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

-8

A

TA = 70 °C

-6.4

Pulsed Drain Current

1

IDM

30

Power Dissipation

3

TA = 25 °C

PD

2.7

W

TA = 70 °C

1.7

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t ≦10s

RJA

45

°C／W

Junction-to-Ambient

2

Steady-State

RJA

65

1Pulse width limited by maximum junction temperature.

2The value of R

θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on RJA t ≦10s value.

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

-30V

25mΩ

-8A

G : GATE

D : DRAIN

S : SOURCE

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PB555BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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