PB555BA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.0

F-24-1

P-Channel Enhancement Mode

Field Effect Transistor

PB555BA

PDFN 2x2S

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-0.8 -1.7

-2.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

A

VDS = -20V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State

Resistance

RDS(ON)

VGS = -10V, ID = -6A

mΩ

VGS = -4.5V, ID = -6A

Forward Transconductance

gfs

VDS = -5V, ID = -6A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

920

Output Capacitance

Coss

133

Reverse Transfer Capacitance

Crss

115

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg(VGS=-10V)

VDS = -15V , ID = -6A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = -15V

ID  -6A, VGEN = -10V, RG = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-2.7

Forward Voltage

VSD

IF = -6A, VGS = 0V

-1

Reverse Recovery Time

trr

IF = -6A , dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

3.8

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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