PB600BA datasheet(1/4 Pages) NIKOSEM

Part #	PB600BA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV 1.0

1

D-38-3

N-Channel Enhancement Mode

Field Effect Transistor

PB600BA

PDFN 2x2S

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

9

A

TA = 70 °C

7.2

Pulsed Drain Current

1

IDM

27

Avalanche Current

IAS

12.6

Avalanche Energy

L = 0.1mH

EAS

7.9

mJ

Power Dissipation

TA = 25 °C

PD

1.7

W

TA = 70 °C

1.1

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

71.7

°C／W

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.7

2.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 55 °C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 4.5V, ID = 9A

11

17.5

mΩ

VGS = 10V, ID = 9A

9

12

Forward Transconductance

1

gfs

VDS = 10V, ID = 9A

45

S

G

D

S

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

12

mΩ

9A

G : GATE

D : DRAIN

S : SOURCE

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PB600BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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