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PB600BA Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PB600BA Datasheet(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
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2 / 4 page ![]() REV 1.0 2 D-38-3 N-Channel Enhancement Mode Field Effect Transistor PB600BA PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 706 pF Output Capacitance Coss 103 Reverse Transfer Capacitance Crss 74 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3.1 Ω Total Gate Charge 2 Qg(VGS=10V) VDS = 15V , ID = 9A 15 nC Qg(VGS=4.5V) 8 Gate-Source Charge 2 Qgs 2.6 Gate-Drain Charge 2 Qgd 3.6 Turn-On Delay Time 2 td(on) VDD = 15V ID 9A, VGEN = 10V, RG = 6Ω 13 nS Rise Time 2 tr 37 Turn-Off Delay Time 2 td(off) 48 Fall Time 2 tf 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.5 A Forward Voltage 1 VSD IF = 9A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 9A , dlF/dt = 100A / S 11 nS Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. |
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