PE534SA datasheet(1/4 Pages) NIKOSEM

Part #	PE534SA

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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1 / 4 page

REV1.0

1

F-5-1

N-Channel Enhancement Mode

Field Effect Transistor

PE534SA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

3

TC = 25 °C

ID

52

A

TC = 100 °C

33

TA = 25 °C

14

TA = 70 °C

11

Pulsed Drain Current

1

IDM

100

Avalanche Current

IAS

22

Avalanche Energy

L = 0.1mH

EAS

24

mJ

Power Dissipation

TC = 25 °C

PD

36

W

TC = 100 °C

14

TA = 25 °C

2.5

TA = 70 °C

1.6

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

50

°C／W

Junction-to-case

RJC

3.5

1Pulse width limited by maximum junction temperature.

2The value of R

JA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C. The value in any given application depends on the user's specific board design

3Package limitation current is 26A

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

7.5mΩ

52A

G : GATE

D : DRAIN

S : SOURCE

G

S

#1

D

D D

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PE534SA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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