PE534SA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.0

F-5-1

N-Channel Enhancement Mode

Field Effect Transistor

PE534SA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.75

2.35

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

0.1

VDS = 20V, VGS = 0V, TJ = 125 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 10A

8.4

10.5

mΩ

VGS = 10V, ID = 10A

6.2

7.5

Forward Transconductance

gfs

VDS = 5V, ID = 10A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

1075

Output Capacitance

Coss

215

Reverse Transfer Capacitance

Crss

155

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

1.8

Total Gate Charge

Qg(VGS=10V)

VDS = 15V, ID = 10A

22.5

Qg(VGS=4.5V)

11.7

Gate-Source Charge

Qgs

3.3

Gate-Drain Charge

Qgd

5.3

Turn-On Delay Time

td(on)

Rise Time

VDD = 15V

Turn-Off Delay Time

td(off)

ID  10A, VGEN = 10V, RG = 6Ω

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 1A, VGS = 0V

0.6

Reverse Recovery Time

trr

IF = 10A , dlF/dt = 100A / S

11.5

Reverse Recovery Charge

Qrr

2.2

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 26A

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