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PE537BA Datasheet(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PE537BA Datasheet(HTML) 1 Page - NIKO SEMICONDUCTOR CO., LTD. |
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1 / 4 page ![]() P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.2 1 I-19-1 PE537BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM G S D G S S S #1 D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current 3 TC = 25 °C ID -33 A TC = 100 °C -20 TA = 25 °C -12 TA = 70 °C -9.3 Pulsed Drain Current 1 IDM -100 Avalanche Current IAS -34 Avalanche Energy L = 0.1mH EAS 57.8 mJ Power Dissipation TC = 25 °C PD 16.7 W TC = 100 °C 6.7 TA = 25 °C 2 TA = 70 °C 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient 2 RθJA 60 °C / W Junction-to-Case RJC 7.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 22A G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 9mΩ -33A |
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