PE537BA datasheet(2/4 Pages) NIKOSEM

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P-Channel Logic Level Enhancement Mode

Field Effect Transistor

REV 1.2

I-19-1

PE537BA

PDFN 3x3P

Halogen-free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1

-1.6

-3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

A

VDS = -20V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State Resistance

RDS(ON)

VGS = -10V, ID = -12A

6.9

mΩ

VGS = -4.5V, ID = -12A

9.9

Forward Transconductance

gfs

VDS = -10V, ID = -12A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

2464

Output Capacitance

Coss

374

Reverse Transfer Capacitance

Crss

271

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg(VGS=-10V)

VDS = -15V , ID = -12A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = -10V

ID  -12A, VGS = -10V, RGEN = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

100

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-12.8

Forward Voltage

VSD

IF = -12A, VGS = 0V

-1.3

Reverse Recovery Time

trr

IF=-12A, dI/dt=100A/μs

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

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