PV501BA datasheet(2/4 Pages) NIKOSEM

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P-Channel Logic Level Enhancement Mode

Field Effect Transistor

REV 1.0

F-53-3

PV501BA

SOP-8

Halogen-free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-1

-1.5

-3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±25V

±100 nA

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

A

VDS = -20V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State Resistance

RDS(ON)

VGS = -10V, ID = -12A

6.1

7.5

mΩ

VGS = -4.5V, ID = -12A

8.7

Forward Transconductance

gfs

VDS = -5V, ID = -12A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

2732

Output Capacitance

Coss

447

Reverse Transfer Capacitance

Crss

358

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

3.8

Total Gate Charge

Qg(VGS=-10V)

VDS = -15V , ID = -12A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

7.6

Gate-Drain Charge

Qgd

13.6

Turn-On Delay Time

td(on)

VDD = -15V, ID  -12A ,

VGS = -10V, RGEN = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

160

Fall Time

100

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-1.4

Forward Voltage

VSD

IF = -12A, VGS = 0V

-1.3

Reverse Recovery Time

trr

IF=-12A, dI/dt=100A/μs

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width  300 sec, Duty Cycle  2%.

2Independent of operating temperature.

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