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FIR2N80FG Datasheet(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

Part # FIR2N80FG
Description  800V N-Channel MOSFET-T
PDF  8 Pages
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Manufacturer  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Direct Link  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR2N80FG Datasheet(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

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800V N-Channel MOSFET-T
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
800
V
ID
Drain Current
Tj=25℃
2.0
A
Tj=100℃
1.25
VGS(TH)
Gate Threshold Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note1)
180
mJ
IAR
Avalanche Current (note2)
2.0
A
PD
Power Dissipation (Tj=25℃)
35
W
Tj
Junction Temperature(Max)
150
℃
Tstg
Storage Temperature
-55~+150
℃
TL
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC
Thermal Resistance,Junction to Case
-
3.57
℃/W
RθJA
Thermal Resistance,Junction to Ambient
-
℃/W
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=
12nC (Typ.).
□ BVDSS=
800V,ID=2A
□ R
DS(on) :
6.3Ω (Max) @VG=10V
□ 100% Avalanche Tested
FIR2N80FG
@ 2018 Copyright By American First Semiconductor
REV:1.0
Page 1/8
YAWW
G
D
S
S
G
D
A
= Assembly Location
Y
= Year
WW
= Work Week
= Specific Device Code
FIR2N80F
PIN Connection
TO-220F
FIR2N80F
120
g
Schematic dia ram


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