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FIR2N80FG Datasheet(PDF) 3 Page - Shenzhen Foster Semiconductor Co., Ltd.

Part # FIR2N80FG
Description  800V N-Channel MOSFET-T
PDF  8 Pages
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Manufacturer  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Direct Link  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR2N80FG Datasheet(HTML) 3 Page - Shenzhen Foster Semiconductor Co., Ltd.

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Typical Characteristics
03
12
15
0
2
4
6
8
10
12
V
DS = 400V
V
DS = 160V
V
DS = 640V
※
Note: I
D = 3A
69
Q
G, Total Gate Charge [nC]
0.2
0.4
1.2
1.4
10
-1
10
0
10
1
150℃
※
Notes :
1. V
GS = 0V
2. 250μ s PulseTest
25℃
0.6
0.8
1.0
V
SD, Source-Drain voltage [V]
8
4
2
0
6
2
4
6
8
10
V
GS = 20V
V
GS = 10V
※
Note: T
J = 25
℃
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
I
D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10-1
101
10
-2
10-1
100
10
1
V
GS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
※
Notes:
1. 250μ sPulseTest
2. T
C = 25
℃
100
V
DS, Drain-Source Voltage [V]
4
10
10
-1
10
0
101
150
oC
25
oC
-55
oC
※
Notes :
1. V
DS = 50V
2. 250μ s PulseTest
6
8
V
GS, Gate-Source Voltage [V]
10-1
101
0
200
400
600
800
C
iss = Cgs + Cgd (Cds = shorted)
C
gd
ds
C = C + C
gd
C
rs
os
s
s
=
※
Notes:
1. V
GS = 0 V
2. f = 1MHz
C
rss
C
oss
C
iss
100
V
DS, Drain-Source Voltage [V]
www.First-semi.com
Page 3/8
FIR2N80FG



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