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IL4208 Datasheet(PDF) 3 Page - Vishay Siliconix |
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IL4208 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 7 page ![]() VISHAY IL420/ IL4208 Document Number 83629 Rev. 1.4, 26-Apr-04 Vishay Semiconductors www.vishay.com 3 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1.16 1.35 V Reverse current VR = 6.0 V IR 0.1 10 µA Input capacitance VF = 0 V, f = 1.0 MHz CIN 40 pF Thermal resistance, junction to ambient Rthja 750 °C/W Parameter Test condition Part Symbol Min Typ. Max Unit Off-state voltage ID(RMS) = 70 µA IL420 VD(RMS) 424 460 V ID(RMS) = 70 µA IL4208 VD(RMS) 565 V Repetitive peak off-state voltage IDRM = 100 µs IL420 VDRM 600 V IL4208 VDRM 800 V Off-state current VD = VDRM,, TA = 100 °C IBD 10 100 µA On-state voltage IT = 300 mA VTM 1.7 30 V On-current PF = 1.0, VT(RMS) = 1.7 V ITM 300 mA Surge (Non-repetitive) on-state current f = 50 Hz ITSM 3.0 A Holding current IH 65 500 µA Latching current VT = 2.2 V IL 5.0 mA LED trigger current VAK = 5.0 V IFT 1.0 2.0 Trigger current temperature gradient ∆IFT/∆Tj 7.0 14 µA/°C Critical state of rise off-state voltage VD = 0.67 VDRM, TJ = 25 °C dV/dtcr 1000 V/ µs VD = 0.67 VDRM, TJ = 80 °C dV/dtcr 5000 V/ µs Critical rate of rise of voltage at current commutation VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms , TJ = 25 °C dV/dtcrq 10000 V/ µs VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms , TJ = 80 °C dV/dtcrq 5000 V/ µs Critical state of rise of on-state current dI/dtcr 8.0 A/ µs Thermal resistance, junction to ambient Rthja 150 °C/W Parameter Test condition Symbol Min Typ. Max Unit Critical rate of rise of coupled input/output voltage IT = 0 A, VRM = VDM = VD(RMS) dV/dt 500 V/ µs Capacitance (input-output) f = 1.0 MHz, VIO = 0 V CIO 0.8 pF Isolation resistance VIO = 500, TA = 25 °C RIO 1012 Ω VIO = 500, TA = 100 °C RIO 1011 Ω |
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