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IRF6621 Datasheet(PDF) 5 Page - International Rectifier

Part # IRF6621
Description  The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance
PDF  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6621 Datasheet(HTML) 5 Page - International Rectifier

  IRF6621 Datasheet HTML 1Page - International Rectifier IRF6621 Datasheet HTML 2Page - International Rectifier IRF6621 Datasheet HTML 3Page - International Rectifier IRF6621 Datasheet HTML 4Page - International Rectifier IRF6621 Datasheet HTML 5Page - International Rectifier IRF6621 Datasheet HTML 6Page - International Rectifier IRF6621 Datasheet HTML 7Page - International Rectifier IRF6621 Datasheet HTML 8Page - International Rectifier IRF6621 Datasheet HTML 9Page - International Rectifier  
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IRF6621
www.irf.com
5
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
VGS = 0V
TJ = 150°C
TJ = 25°C
TJ = -40°C
0.1
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
0.01
0.1
1
10
100
1000
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
25
50
75
100
125
150
TC , Case Temperature (°C)
0
10
20
30
40
50
60
-75
-50
-25
0
25
50
75
100 125 150
TJ , Junction Temperature ( °C )
1.0
1.5
2.0
2.5
ID = 250µA
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
10
20
30
40
50
60
I D
TOP
3.0A
4.3A
BOTTOM
9.6A



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