1

Publication date: December 2003

SJJ00231BED

Composite Transistors

UP04401

Silicon PNP epitaxial planar type

For general amplification

■ Features

• Two elements incorporated into one package

(Each transistor is separated)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• 2SB0709A × 2

■ Absolute Maximum Ratings T

a

= 25°C

Unit: mm

Internal Connection

Marking Symbol: 5K

4

Tr1

Tr2

5

6

1

3

2

■ Electrical Characteristics T

a

= 25°C ± 3°C

1: Emitter (Tr1)

4: Emitter (Tr2)

2: Base (Tr1)

5: Base (Tr2)

3: Collector (Tr2)

6: Collector (Tr1)

SSMini6-F1 Package

(0.30)

654

123

5˚

5˚

0.20

+0.05

–0.02

Display at No.1 lead

(0.50)(0.50)

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−60

V

Collector-emitter voltage (Base open)

−50

V

Emitter-base voltage (Collector open)

−7V

Collector current

−100

mA

Peak collector current

−200

mA

Total power dissipation

125

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

−60

V

Collector-emitter voltage (Base open)

= −2 mA, I

B

= 0

−50

V

Emitter-base voltage (Collector open)

−7V

Collector-base cutoff current (Emitter open)

− 0.1

µA

Collector-emitter cutoff current (Base open)

= −10 V, I

B

= 0

−100

µA

Forward current transfer ratio

180

390



Collector-emitter saturation voltage

− 0.3

− 0.5

V

Transition frequency

= −10 V, I

E

= 1 mA, f = 200 MHz

80

MHz

Collector output capacitance

= −10 V, I

E

= 0, f = 1 MHz

2.7

pF

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.