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FIR210N075TG Datasheet(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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FIR210N075TG Datasheet(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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1 / 7 page ![]() The FIR210N075TG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V Good stability and uniformity with high EAS Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Excellent package for good heat dissipation Application Automotive applications Hard Switched and High Frequency Circuits Uninterruptible Power Supply Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity FIR210N075T FIR210N075TG TO-3P/TO-247 - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 210 A Drain Current-Continuous(TC=100℃) ID (100℃) 150 A Pulsed Drain Current IDM 840 A Maximum Power Dissipation PD 330 W Derating factor 2.2 W/℃ Single pulse avalanche energy (Note 4) EAS 2200 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ FIR210N075ANG N-Channel Enhancement Mode Power Mosfet Marking Diagram Description General Features PIN Connection TO-3P G D S A = Assembly Location Y = Year WW = Work Week = Specific Device Code FIR210N075AN YAWW FIR210N075AN @ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/7 |
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