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FIR210N075TG Datasheet(PDF) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

Part # FIR210N075TG
Description  N-Channel Enhancement Mode Power Mosfet
PDF  7 Pages
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Manufacturer  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
Direct Link  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR210N075TG Datasheet(HTML) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

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Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.455
/W
℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75
V
Zero Gate Voltage Drain Current
IDSS
VDS=75V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±200
nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
25℃
2.9
4
mΩ
Drain-Source On-State Resistance
125℃
RDS(ON)
VGS=10V, ID=40A
4.7
6.5
mΩ
Forward Transconductance
gFS
VDS=25V,ID=40A
100
165
S
Dynamic Characteristics
Input Capacitance
Clss
11000
PF
Output Capacitance
Coss
914
PF
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
695
PF
Switching Characteristics
Turn-on Delay Time
td(on)
23
nS
Turn-on Rise Time
tr
190
nS
Turn-Off Delay Time
td(off)
130
nS
Turn-Off Fall Time
tf
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
120
nS
Total Gate Charge
Qg
-
250
Qg
nC
Gate-Source Charge
Qgs
-
48
Qgs
nC
Gate-Drain Charge
Qgd
ID=30A,VDD=30V,VGS=10V
-
98
Qgd
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V,IS=40A
1.2
V
Reverse Recovery Time
trr
48
nS
Reverse Recovery Charge
Qrr
TJ = 25°C, IF = 40A
di/dt = 100A/μs(Note2)
78
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.
3. EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=2mH,Rg=25Ω,IAS=37A
FIR210N075ANG
www.First-semi.com
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