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FIR3416LTG Datasheet(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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FIR3416LTG Datasheet(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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1 / 7 page  Description The FIR3416LTG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3416 FIR3416LTG SOT-23 Ø180mm 8mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 6 A Drain Current-Pulsed (Note 1) IDM 30 A Maximum Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 89.3 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA PIN CONFIGURATION FIR3416LTG N-Channel Enhancement Mode Power MOSFET SOT-23 top view Schematic diagram Marking and pin assignment Package outline @ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/7 |
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