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SPD80151Z Datasheet(PDF) 2 Page - Will Semiconductor Ltd. |
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SPD80151Z Datasheet(HTML) 2 Page - Will Semiconductor Ltd. |
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2 / 3 page ![]() SPD80151Z Will Semiconductor Ltd. 2 Revision 1.0, 2017/11/15 Absolute maximum ratings Notes: 1. Mounted on 5.0mm 2 (0.03mm thick) Copper Pads to each terminal. Electrical characteristics (TA=25 oC, unless otherwise noted) Part Number (Uni) Reverse Stand-off Voltage VRWM (V) Breakdown Voltage VBR@ IT (V) Test Current IT (mA) Maximum Clamping Voltage VC @IPP (V) Maximum Peak Pulse Current IPP (A) (A) Maximum Reverse Leakage IR @ VR (μA) Min. Max. SPD80151Z 15.0 16.7 19.2 1.0 25 16.4 1 Typical characteristics (TA=25oC, unless otherwise noted) Fig. 1 Peak Pulse Power Fig. 2 Pulse Derating Curve Parameter Symbol Value Unit Peak Pulse Power on 10/1000µs waveform PPPM 400 W Peak Pulse Current of on 10/1000µs waveform IPPM 16.4 A Junction Temperature TJ -55 ~150 ℃ Operating Temperature TOP -40 ~125 ℃ Storage Temperature Range TSTG -55 ~150 ℃ 0.1µs 1µs 10µs 100µs 1ms 10ms td - Pulse Width (ms) Non-repetitive pulse waveform 10/1000µs 0.1 1 10 100 0 25 50 75 100 125 150 TA – Ambient Temperature (℃) 0 25 50 100 75 |
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