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EMD06N60CS Datasheet(PDF) 4 Page - Excelliance MOS Corp. |
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EMD06N60CS Datasheet(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 5 page ![]() 2013/10/22 p.4 EMD06N60CS DS V = 10V A T = ‐55 °C 25 °C 125 °C 10 8 6 4 2 0 GS 3 2 4 5 6 7 V ,Gate‐Source Voltage( V ) Body Diode Forward Voltage Variation with Source Current and Temperature V ‐ Body Diode Forward Voltage( V ) 0.001 0 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 1 10 100 GS 1.0 0.8 1.2 ‐55° C 1.4 25° C T = 125° C A 50 Gate Threshold Voltage v.s. Temperature 0 ‐50 1.0 2.0 j ‐25 0 25 4.0 3.0 5.0 6.0 150 100 75 125 T ,Junction Temperature(°C ) 50 On‐Resistance Variation with Temperature 0.6 ‐50 0.8 1.0 j ‐25 0 25 1.4 1.2 1.6 1.8 150 100 75 125 T ,Junction Temperature(°C ) 50 All o w a b le Pow e r D issip a t i o n 0 10 20 c 0 25 40 30 50 60 150 10 0 75 125 T ,C a s e T e m p er a t ur e( °C ) V ,Drain‐Source Voltage( V ) Typical Output Characteristics 8 10 0 0 4 30 DS 20 40 10V 16 12 20 Vgs=20V 7.5V 50 60 6.5V 7V 8V TYPICAL CHARACTERISTICS |
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