II. Manufacturing Information

A. Description/Function: Low-Cost, Micropower, Low-Dropout, High-Output-Current, SOT23 Voltage References

B. Process:

B12 (Standard 1.2 micron silicon gate CMOS)

C. Number of Device Transistors:

117

D. Fabrication Location:

California or Oregon, USA

E. Assembly Location:

Malaysia or Thailand

F. Date of Initial Production:

March, 2001

III. Packaging Information

A. Package Type:

3-Pin SOT23

B. Lead Frame:

Copper or Alloy 42

C. Lead Finish:

Solder Plate

D. Die Attach:

Silver-filled Epoxy

E. Bondwire:

Gold (1.0 mil dia.)

F. Mold Material:

Epoxy with silica filler

G. Assembly Diagram:

# 05-0901-0179

H. Flammability Rating:

Class UL94-V0

I. Classification of Moisture Sensitivity

per JEDEC standard JESD22-112:

Level 1

IV. Die Information

A. Dimensions:

44 x 31mils

B. Passivation:

C. Interconnect:

Aluminum/Si (Si = 1%)

D. Backside Metallization:

None

E. Minimum Metal Width:

1.2 microns (as drawn)

F. Minimum Metal Spacing:

1.2 microns (as drawn)

G. Bondpad Dimensions:

5 mil. Sq.

H. Isolation Dielectric:

I. Die Separation Method:

Wafer Saw