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SLP830S Datasheet(PDF) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLP830S Datasheet(HTML) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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1 / 6 page  Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 01 April. 2018 SLP830S / SLF830S 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLF830S SLP830S Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (T C = 25℃) 5.0 A - Continuous (T C = 100℃) 3.0 A IDM Drain Current - Pulsed (Note 1) 20 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ IAR Avalanche Current (Note 1) 5.0 A EAR Repetitive Avalanche Energy (Note 1) -- mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) 48 74 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Max. Units SLF830S SLP830S RθJC Thermal Resistance, Junction-to-Case 2.60 1.69 ℃ /W RθJS Thermal Resistance, Case-to-Sink Typ. 62.5 62.5 ℃ /W RθJA Thermal Resistance, Junction-to-Ambient 110 110 ℃ /W G S D G D S TO-220F G D S TO-220 |
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