SLP830S datasheet(2/6 Pages) MAPLESMI

2 / 6 page

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 01 April. 2018

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 uA

500

△

BVDSS

/ △TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 uA, Referenced to 25 ℃

0.61

V/℃

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125℃

250

IGSSF

Gate-Body Leakage Current,

Forward

VGS = 30 V, VDS = 0 V

100

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 uA

2.0

4.0

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 2.0 A

1.35

1.5

gFS

Forward Transconductance

VDS = 40 V, ID = 2.0 A

(Note 4)

2.4

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

560

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 250 V, ID = 5.0 A,

RG = 25 Ω

(Note 4, 5)

Turn-On Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDS = 480 V, ID = 4.0A,

VGS = 10 V

(Note 4, 5)

13.3

Qgs

Gate-Source Charge

4.0

Qgd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

5.0

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 4.0 A

1.6

trr

Reverse Recovery Time

VGS = 0 V, IS = 4.0 A,

220

Qrr

Reverse Recovery Charge

dIF / dt = 100 A/us

(Note 4)

1.0

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS = 5.0A,L=24mH, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 5.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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