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DAM60P20H Datasheet(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

Part # DAM60P20H
Description  P-Channel Enhancement Mode MOSFET
PDF  4 Pages
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Manufacturer  DACO [DACO SEMICONDUCTOR CO.,LTD.]
Direct Link  http://www.dacosemi.com/
Logo DACO - DACO SEMICONDUCTOR CO.,LTD.

DAM60P20H Datasheet(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V IDS=-250uA
-20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V VDS=-20V
-
-
-1
uA
Gate-Body Leakage
IGSS
VGS=±12V VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS IDS=-250uA
-0.3
-0.6
-1
V
Static Drain-Source On-Resistance
RDS(on)
VGS=-4.5V IDS=-8A
-
6
8
mΩ
Dynamic Characteristics
Input Capacitance
Ciss
VDS=-15V
VGS=0V
Freq.=1MHz
-
4060
8000
pF
Output Capacitance
Coss
-
520
1000
Reverse Transfer Capacitance
Crss
-
400
800
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=-10V
VGS=-4.5V
RG =25Ω
IDS=-1A
-
13.2
26
ns
Rise Time
Tr
-
68
120
Turn-Off Delay Time
Td(off)
-
160
320
Fall Time
Tf
-
154
300
Total Gate Charge
Qg
VDS=-10V
VGS=-4.5V
IDS=-5A
-
44.4
80
nC
Gate to Source Charge
Qgs
-
7.2
14
Gate to Drain Charge
Qgd
-
10.2
20
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V IS=-1A
-
-
-1
V
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. R
R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
Jun.2018
DAM60P20H



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