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TO-263 Datasheet(PDF) 3 Page - Hi-Sincerity Mocroelectronics

Part # TO-263
Description  N-Channel Power Field Effect Transistor
PDF  6 Pages
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Manufacturer  HSMC [Hi-Sincerity Mocroelectronics]
Direct Link  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

TO-263 Datasheet(HTML) 3 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 3/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Characteristics Curve
Typical On-Resistance & Drain Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0123456
789
10
11
12
Drain Current-ID (A)
VGS=10V
On Resistance Variation with Temperature
0.00
0.50
1.00
1.50
2.00
2.50
0
25
50
75
100
125
150
Case Temperature-Tc (
oC)
VGS=10 V
ID=3A
On-Region Characteristic
0
1
2
3
4
5
6
7
8
9
10
024
68
10
VDS, Drain-Source Voltage(V)
VGS=4
VGS=5V
VGS=6V
VGS=10V
VGS=8V
Capacitance Characteristics
0
500
1000
1500
2000
0.1
1
10
100
VDS, Deain-Source Voltage (V)
Ciss
Crss
Coss
Drain Current Variation with Gate Voltage &
Temperature
0
1
2
3
4
5
6
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Gate-Source Voltage-VGS (V)
Tc= 25°C
VDS=10 V
Typical On-Resistance & Drain Current
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
01
23
4
567
89
10
11
12
Drain Current-ID (A)
VGS=10V
VGS=15V



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