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EMF14N02A Datasheet(PDF) 4 Page - Excelliance MOS Corp.

Part # EMF14N02A
Description  N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMF14N02A Datasheet(HTML) 4 Page - Excelliance MOS Corp.

  EMF14N02A Datasheet HTML 1Page - Excelliance MOS Corp. EMF14N02A Datasheet HTML 2Page - Excelliance MOS Corp. EMF14N02A Datasheet HTML 3Page - Excelliance MOS Corp. EMF14N02A Datasheet HTML 4Page - Excelliance MOS Corp. EMF14N02A Datasheet HTML 5Page - Excelliance MOS Corp. EMF14N02A Datasheet HTML 6Page - Excelliance MOS Corp.  
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2014/11/25 
p.4 
EMF14N02A
TYPICAL CHARACTERISTICS 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
0.8
1.2
1.0
1.5
1.4
0.7
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature(°C)
ID= 18A
VGS= 4.5V
On‐Resistance Variation with Temperature
0.9
1.1
1.3
10
1
0.01
0.001
0.0001
00.2
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage( V )
Body Diode Forward Voltage Variation
with Source Current and Temperature
VGS= 0V
TJ= 125°C
25°C
-55°C
0.1
100
0
20
40
60
80
100
4.0
3.5
3.0
2.5
2.0
1.5
VGS, Gate‐Source Voltage( V )
VDS= 5V
TA= -55°C
125°C
25°C
Transfer  Characteristics
100
80
60
40
20
0
0
1
3
4
6
VGS = 4.5V
3.0V
2.5V
VDS, Drain‐Source Voltage( V )
 On‐Region Characteristics
2
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
20
40
60
80
100
VGS = 2.5V
3.0V
4.5V
ID, Drain Current( A )
 On‐Resistance Variation with
 Drain Current and Gate Voltage
0.05
0.04
0.02
0.03
0.01
0
02
3
45
VGS, Gate‐Source Voltage( V )
On‐Resistance Variation with Gate‐Source Voltage
ID=9A
TA= 125°C
TA= 25°C



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