IRFP350

16A,400V,0.300Ohm, N-Channel Power Mosfet

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3

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

-

-

16

A

Pulse Source to Drain Current (Note3)

Modified

Mosfet

Symbol Showing the

Integral Reverse P-N

Junction Diode

-

-

64

A

Source to Drain Diode Voltage (Note 2)

-

-

1.6

V

Reverse Recovery Time

270

-

1300

ns

Reverse Recovered Charge

1.7

-

8.1

µC

Notes:

2.

Pulse Test: Pulse width≤300µs, duty cycle ≤ 2%.

3.

Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4.

Typical Performance Curves

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE

TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE