IRFP350 datasheet(2/6 Pages) ARTSCHIP

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IRFP350

16A,400V,0.300Ohm, N-Channel Power Mosfet

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Absolute Maximum Ratings Tc=25℃, Unless Otherwise Specified

IRFP350

UNITS

Drain to Source Voltage (Note 1)…………………………………………………………………....VDS

400

Drain to Gate Voltage (RGS=20KΩ)(Note 1)……………………………………………………...VDGR

400

Continuous Drain Current……………………………………………………………………………..ID

Tc=100℃………………………………………………………………………………………………...ID

Pulsed Drain Current (Note3)……………………………………………………………………....IDM

Gate to Source Voltage……………………………………………………………………………..VGS

±20

Maximum Power Dissipation………………………………………………………………………..PD

180

Linear Derating Factor………………………………………………………………………………….

1.44

W/℃

Single Pulse Avalanche Energy Rating (Note 4)…………………………………………………EAS

700

Operating and Storage Temperature………………………………………………………….TJ, TSTG

-55 to 150

℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s…………………………………………………….TL

300

℃

Package Body for 10s, See Techbrief 334……………………………………………………....Tpkg

260

℃

CAUTION:

Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a

stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of

this specification is not implied.

NOTE:

TJ=25℃ to 125℃.

Electrical Specifications Tc=25℃, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA(Figure 10)

400

Gate to Threshold Voltage

VGS(TH)

VGS=VDS, ID=250µA

2.0

4.0

VDS=Rated BVDSS, VGS=0V

µA

Zero-Gate Voltage Drain Current

IDSS

VDS=0.8 x Rated BVDSS, VGS=10V,TJ=125℃

250

On-State Drain Current (Note 2)

ID(ON)

VDS>ID(ON) x rDS(ON)MAX, VGS =10V (Figure7)

Gate to Source Leakage Current

IGSS

VGS=±20V

±100

Drain to Source On Resistance (Note2)

rDS(ON)

VGS=10V, ID=8.9A (Figures 8,9)

0.250

0.300

Ω

Forward Transconductance (Note 2)

gfs

VDS=2 x VGS, ID=8.0A (Figure 12)

8.0

Turn-On Delay Time

tD(ON)

Rise Time

Turn-Off Delay Time

tD(OFF)

110

Fall Time

VDD=200V, ID=16A,RGS=6.2Ω, VGS=10V,

RL=12.3 Ω

MOSFET Switching Times are Essentially

Independent of Operating Temperature

Total Gate Charge

(Gate to Source + Gate to Drain)

130

Gate to Source Charge

Qgs

Gate to Drain “Miller” Charge

Qgd

VGS=10V, ID=16A, VDS=0.8 x Rated BVDSS。

IG（REF） = 1.5mA (Figure 14)

Gate Charge is Essentially Independent of

Operating Temperature

Input Capacitance

CISS

2000

Output Capacitance

Coss

400

Reverse-Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f =1.0MHz (Figure 11)

100

Internal Drain Inductance

Measured Between

the Contact Screw

on Header that is

Closer to Source and

Gate

Pins

and

Center of Die

5.0

Internal Source Inductance

Measured from the

Source Lead, 6mm

(0.28in)

From

Header to Source

Bonding Pad

Modified

MOSFET

Symbol Showing the

internal

Devices

Inductances

12.5

Junction to Case

RӨJC

0.70

℃

Junction to Ambient

RӨJA

Free Air Operation

℃

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