47A，600V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

60R070

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

Note：1. Repetitive rating : pulse width limited by maximum junction temperature

4. Pulse test: pulse width

≤300μs, duty cycle≤2%

5. Essentially independent of operating temperature

3 of7

Rev 1.0 JUL. 2016

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Off characteristics

Drain-source

breakdown voltage

600

-

-

V

-

650

-

V

Drain-source leakage current

-

-

1

μA

-

10

-

μA

Gate-body leakage

current

Forward

-

-

100

nA

Reverse

-

-

-100

nA

Breakdown voltage temperature

coefficient

referenced to 25℃

-

0.6

-

V/

°C

On characteristics

Gate threshold voltage

2.5

3.5

4.5

V

Static drain-source on-resistance

-

60

70

m

Ω

Dynamic characteristics

Input capacitance

-

3100

-

pF

Output capacitance

-

750

-

pF

Reverse transfer capacitance

-

10

-

pF

Switching characteristics

Turn-on delay time

Ω

-

16

-

ns

Rise time

-

12

-

ns

Turn-off delay time

-

83

-

ns

Fall time

-

5

-

ns

Total gate charge

-

170

-

nC

Gate-source charge

-

21

-

nC

Gate-drain charge

-

87

-

nC

Drain-source diode characteristics

Drain-source diode forward voltage

-

-

1.5

V

Continuous drain-source current

-

-

47

A

Pulsed drain-source current

-

-

140

A

Reverse recovery time

-

720

-

ns

Reverse recovery charge

-

19

-

μC