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65R950 Datasheet(PDF) 2 Page - KIA Semiconductor Technology |
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65R950 Datasheet(HTML) 2 Page - KIA Semiconductor Technology |
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2 / 6 page ![]() 5A,650V N-CHANNEL MOSFET KIA SEMICONDUCTORS 65R950 KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolute maximum ratings (TC= 25 ºC , unless otherwise noted) Parameter Symbol Rating Units Drain-source voltage VDSS 650 V Gate-source voltage VGSS +30 V Drain current continuous TC=25ºC ID 5* A TC=100 ºC 4* A Drain current pulsed (note1) IDM 16* A Avalanche energy Repetitive (note1) EAR 34 mJ Single pulse (note2) EAS 67.5 mJ Avalanche energy(note1) IAR 1 A Peak diode recovery dv/dt (note3) dv/dt 4.5 V/ns Total power dissipation TC=25 ºC PD 30 W derate above 25 ºC 0.8 W/ ºC Operating and storage temperature range TJ, TSTG -55~+150 ºC Maximum lead temperature for soldering purposes, 1/8〞from case for 5 seconds TL 300 ºC * Drain current limited by maximum junction temperature 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance, Junction-ambient RthJA 62 ºC/W Thermal resistance, case-to-sink typ. RthJS 0.5 ºC/W Thermal resistance, Junction-case RthJC 4.17 ºC/W 2 of6 Rev 1.0 Jun 2015 |
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