80A，80V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

75NF75

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

°C,unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static characteristics

Drain-source breakdown voltage

80

-

-

V

Zero gate voltage drain current

-

-

1

μA

ºC

-

-

100

Gate threshold voltage

2

3

4

V

Gate leakage current

-

-

+100

nA

Drain-source on-state resistance

-

7

9

m

Ω

Diode characteristics

Diode forward voltage

-

-

1.3

V

Diode continuous forward current

-

-

80

A

Reverse recovery time

-

25

-

nS

Reverse recovery charge

-

18.5

-

nC

Gate resistance

-

1.3

-

Ω

Input capacitance

F=1.0MHz

-

3110

-

pF

Output capacitance

-

445

-

Reverse transfer capacitance

-

270

-

Turn-on delay time

-

20.4

-

nS

Turn-on rise time

-

63

-

Turn-off delay time

67

-

Turn-off fall time

-

43

-

Total gate charge

-

76

-

nC

Gate-source charge

-

9.5

-

Gate-drain charge

-

40

-

Note:1. Pulse test; pulse width

≤300μs, duty cycle ≤2%.

2.Guaranteed by design,not subject to production testing.

3.Package limitation current is 50A. Calculated continuous current based on maximum allowable

junction temperature.

4.Repetitive rating, pulse width limited by max junction temperature.

3 of7

Rev 1.1 JAN 2014