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830S Datasheet(PDF) 2 Page - KIA Semiconductor Technology

Part # 830S
Description  5A竊?50V N-CHANNEL MOSFET
PDF  7 Pages
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Manufacturer  KIA [KIA Semiconductor Technology]
Direct Link  http://en.kiaic.com/
Logo KIA - KIA Semiconductor Technology

830S Datasheet(HTML) 2 Page - KIA Semiconductor Technology

  830S Datasheet HTML 1Page - KIA Semiconductor Technology 830S Datasheet HTML 2Page - KIA Semiconductor Technology 830S Datasheet HTML 3Page - KIA Semiconductor Technology 830S Datasheet HTML 4Page - KIA Semiconductor Technology 830S Datasheet HTML 5Page - KIA Semiconductor Technology 830S Datasheet HTML 6Page - KIA Semiconductor Technology 830S Datasheet HTML 7Page - KIA Semiconductor Technology  
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5A，550V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
830S
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
4. Absolute maximum ratings
Parameter
Symbol
Rating
Units
Drain-source voltage
VDSS
550
V
Continuous drain currentTC=25 ºC
ID
5.0
A
Continuous drain currentTC=100 ºC
3.0
A
Pulsed drain current，VGS@10V
（note1）
IDM
20
A
Power dissipation（Tc=25℃）
PD
61.09
W
Derating factor above 25℃
0.49
W/℃
Gate-source voltage
VGS
+20
V
Single pulse avalanche energy
（note2）
EAS
161
mJ
Avalanche energy, repetitive
（note1）
EAR
7.6
mJ
Avalanche Current
（note1）
IAR
5.0
A
Peak diode recovery dv/dt
（note3）
dv/dt
4.5
V/ns
Gate-source ESD(HBM-C=100pF,R=1.5KΩ)
VESD(G-S)
3000
V
Maximum temperature for soldering
TL
300
ºC
Operating junction and storage temperature
range
TJ ,TSTG
150,-55 to150
ºC
5. Thermal characteristics
Symbol
Parameter
Rating
Unit
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
ºC/W
RθJC
Thermal Resistance, Junction-to-Case
1.65
ºC/W
R
θJS
Thermal Resistance, Case-to-Sink Typ.
0.5
ºC/W
2 of7
Rev 1.0 Aug 2015



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