4.0A，30V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

3402

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Drain-source breakdown voltage

30

-

-

V

Zero gate voltage drain current

-

-

1

μA

Gate- body leakage current

-

-

100

nA

Gate threshold voltage

μA

0.8

1

1.6

V

On state drain current

10

-

-

A

Static drain-source on-resistance

-

-

70

m

Ω

-

-

75

-

-

105

Forward transconductance

gfs

-

8.0

-

S

Diode forward voltage

-

0.8

1.2

V

Maximum body-diode continuous current

-

-

2.5

A

Input capacitance

f=1MHz

-

390

-

pF

Output capacitance

-

54.5

-

Reverse transfer capacitance

-

41

-

Gate resistance

-

3

-

Ω

Total gate charge

-

4.34

-

nC

Gate-source charge

-

0.6

-

Gate-drain charge

-

1.38

-

Turn-on delay time

Ω,,

-

3.3

-

ns

Rise time

-

1

-

Turn-off delay time

-

21.7

-

Fall time

-

2.1

-

Reverse recovery time

IF=4.0A,dI/dt=100A/

μs,

-

12

-

nS

Reverse recovery charge

-

6.3

-

nC

’s specific

board design.The current rating is based on the t<10s thermal resistance rating.

B.Repetitive rating,pulse width limited by junction temperature.

D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80

μs pulses,duty cycle 0.5%

max.

3 of5

Rev 1.1 JAN 2014