3407 datasheet(3/5 Pages) KIA

3 / 5 page

-4.1A，-30V

P-CHANNEL MOSFET

KIA

SEMICONDUCTORS

3407

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

(TA=25°C,unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Drain-source breakdown voltage

BVDSS

VGS=0V,ID=-250μA

-30

Zero gate voltage drain current

IDSS

VDS=-24V,VGS=0V

-1

μA

TJ=55°C

-5

Gate- body leakage current

IGSS

VGS=+20V,VDS=0V

+100

Gate threshold voltage

VGS(th)

VDS=VGS,ID=-250

μA

-1

-1.8

-3

On state drain current

ID(on)

VGS=-4.5V,VDS=-5V

-10

Static drain-source on-resistance

RDS(on)

VGS=-10V,ID=-4.1A

VGS=-4.5V,ID=-3.0A

Forward transconductance

gfs

VDS=-5.0V,ID=-4.0A

5.5

8.2

Diode forward voltage

VSD

VGS=0V,IS=-1A

-0.77

-1.0

Maximum body-diode continuous current

-2.2

Input capacitance

Ciss

VDS=-15V,VGS=0V,

f=1MHz

700

840

Output capacitance

Coss

120

Reverse transfer capacitance

Crss

Gate resistance

VDS=0V,

VGS=0V,f=1MHz

Total gate charge(10V)

VDS=-15V,VGS=-4.5V

ID =-4.0A

14.3

Total gate charge(4.5V)

Gate-source charge

Qgs

3.1

Gate-drain charge

Qgd

Turn-on delay time

td(on)

VDS=-15V,RL=3.6

Ω,,

RG=3Ω,VGS=-10V

8.6

Rise time

Turn-off delay time

td(off)

28.2

Fall time

13.5

Reverse recovery time

trr

IF=-4A,dI/dt=100A/

μs,

Reverse recovery charge

Qrr

3 of5

Rev 1.1 JAN 2014

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