Sales Information

Phone:(425) 353-3010

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SVSA2800S - 9.0

E-mail: vptsales@vptpower.com

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SVSA2800S Series

6.5 VPT RHA PLAN AND APPROACH

VPT takes a conservative approach to radiation testing to ensure product performance during space travel. VPT’s DLA approved

Radiation Hardness Assurance (RHA) plan documents VPT’s processes and procedures for guaranteeing the performance of VPT

products under various environmental conditions in space, including TID, SEE, and ELDRS.

Documents Available

Details

DLA approved Radiation Hardness Assurance (RHA) Plan Summary

The radiation environments covered by this overview include: total ionizing dose (TID), which

includes enhanced low dose rate sensitivity (ELDRS); and single event effects (SEE).

Worst-Case Analysis Report

Detailed worst-case analysis guarantees circuit performance post radiation and end of life.

Stress Report

Individual component stress analysis and deratings are included as part of the WCA report.

Radiation Test Summary Report

An overview report on the component level RLAT and characterization testing for TID and DD

as well as the hybrid level characterizations for TID and SEE response.

Reliability Report

MTBF report based on MIL-HDBK-217 reliability calculations.

Thermal Analysis Report

Component temperature rise analysis and measurement results.

Test Definition

VPT’s Approach

Total Ionizing Dose (TID). A measure of the energy absorbed in the

semiconductor components from the naturally occurring sources of

radiation (protons, electrons, photons). This results in the slow

degradation of semiconductor performance specifications. TID is tested

by exposing components to gamma radiation from a Cobalt-60 source.

Designed for 30 krad(Si). Sensitive semiconductor components undergo RLAT to 60 krad(Si)

per MIL-STD-883 Method 1019. Converters are characterized to 60 krad(Si).

Enhanced Low Dose Rate Sensitivity (ELDRS): Many linear-bipolar

integrated circuits show enhanced parameter degradation when exposed

at low dose rates close to those seen in a space environment as

compared to the high dose rates (50-300 rad(Si)/s) that components were

traditionally tested at for TID degradation. MIL-STD-883 Method 1019

gives guidance for characterizing components for ELDRS. Components

that exhibit ELDRS are tested for TID at a rate below 0.01 rad(Si)/s.

All bipolar linear ICs are characterized for ELDRS sensitivity and tested in accordance with

MIL-STD-883 test method 1019 section 3.13

Single Event Effects (SEE). Single high energy protons and heavy ions

can deposit sufficient energy in a semiconductor component, causing a

range of effects. SEEs include single event latchups (SELs), single event

gate ruptures (SEGRs), single event transients (SETs), single event

functional interrupts (SEFIs) and single event burnouts (SEBs).

Converters are characterized for catastrophic events (SEL, SEB, SEGR) as well as functional

characterized for cross section and magnitude of output transients (SET) for at least 3

different LET levels.

Radiation Lot Acceptance Testing (RLAT): Semiconductor wafer lots are

exposed to TID on a sample basis. If the parameter degradation for the

tested samples is within the predetermined acceptance limits, then the lot

can be used in radiation hardened converters.

Sensitive semiconductor components undergo RLAT for TID.