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IXFR90N30 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFR90N30 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 3 page  © 2013 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 300 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 300 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 75 A I DM T C = 25°C, Pulse Width Limited by TJM 360 A I A T C = 25°C90 A E AS T C = 25°C3 J dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns P D T C = 25°C 417 W T J - 55 ... +150 °C T JM 150 °C T stg - 55 ... +150 °C T L Maximum Lead Temperature for Soldering 300 °C T SOLD Plastic Body for 10s 260 °C V ISOL 50/60 Hz, 1 Minute 2500 V~ F C Mounting Force 20..120/4.5..27 N/lb Weight 5 g DS98764A(6/13) Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 300 V V GS(th) V DS = VGS, ID = 4mA 2.0 4.5 V I GSS V GS = ±20V, VDS = 0V ±100 nA I DSS V DS = VDSS, VGS = 0V 100 μA T J = 125°C 2 mA R DS(on) V GS = 10V, ID = 45A, Note 1 36 m Ω HiPerFETTM Power MOSFET IXFR90N30 V DSS = 300V I D25 = 75A R DS(on) ≤ ≤≤≤≤ 36m Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 250ns Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Avalanche Rated Fast Intrinsic Rectifier Low R DS(ON) and QG Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC & DC Motor Controls G = Gate D = Drain S = Source ISOPLUS247 E153432 G S D Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier (Electrically Isolated Tab) |
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