| Electronic Components Datasheet Search |
|
TLN212F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
TLN212F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
|
1 / 4 page ![]() TLN212(F) 2004-01-06 1 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. • High output • Effective emission diameter of 388 × 296µm • Optical output efficiently radiated in solid angle of 1.136sr • Can be operated at VCC = 3V (which is equal to is two cells) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 50 mA Pulse forward current (Note 2) IFP 800 mA Reverse voltage VR 1 V Operating temperature Topr −25~60 °C Storage temperature Tstg −40~90 °C (Note 1): Permissible value for acceptance inspection / characteristic test and is guaranteed for actual application (Note 2): Within 4 hours at 1 cycle with frequency 10kHz, duty 50%, power applied for 0.1s paused for 0.4s Unit: mm TOSHIBA ― Weight: 0.18g(typ.) 0.22ms 1.56ms IFP = 0.8A 12 16 1 28.48ms 400ms 428.48ms |
Similar Part No. - TLN212F |
|
Similar Description - TLN212F |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |