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TLN212F Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # TLN212F
Description  INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLN212F Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TLN212(F)
2004-01-06
1
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN212(F)
Lead Free Product
Infrared Light−Emission Diode For Still Camera
Light Source For Auto Focus
• Optical radiation of current confining LED chip is condensed by a
resin lens.
• High output
• Effective emission diameter of 388 × 296µm
• Optical output efficiently radiated in solid angle of 1.136sr
• Can be operated at VCC = 3V (which is equal to is two cells)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
IF
50
mA
Pulse forward current
(Note 2)
IFP
800
mA
Reverse voltage
VR
1
V
Operating temperature
Topr
−25~60
°C
Storage temperature
Tstg
−40~90
°C
(Note 1): Permissible value for acceptance inspection / characteristic
test and is guaranteed for actual application
(Note 2): Within 4 hours at 1 cycle with frequency 10kHz, duty 50%,
power applied for 0.1s paused for 0.4s
Unit: mm
TOSHIBA
―
Weight: 0.18g(typ.)
0.22ms
1.56ms
IFP = 0.8A
12
16
1
28.48ms
400ms
428.48ms


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