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TLN212F Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLN212F Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() TLN212(F) 2004-01-06 3 IF – Ta Ambient temperature Ta (°C) 60 0 0 20 40 60 80 40 20 40 0 0 400 800 20 30 10 200 600 Radiation Pattern (typ.) Ta = 25°C Relative intensity IFP – VFP (typ.) Pulse forward voltage VFP (V) 800 0 0 600 400 200 1 2 3 Ta = 60° −20° 25° 0 0.2 0.4 0.6 0.8 1.0 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 10° 20° 30° 40° 50° 60° 70° 80° 90° φe – IFP (typ.) Pulse forward current IFP (mA) 60° Ta = −20°C 25° 1.0 0 820 0.8 0.6 0.4 0.2 840 860 880 900 920 940 Wavelength Characteriistic (typ.) Wave length λ (nm) IF = 50mA Ta = 25°C |
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